GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si
GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 μm × 5 μm. The double-sided dielectric di...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-12-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/1/134 |
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| author | Wen Chen Meixin Feng Yongjun Tang Jian Wang Jianxun Liu Qian Sun Xumin Gao Yongjin Wang Hui Yang |
| author_facet | Wen Chen Meixin Feng Yongjun Tang Jian Wang Jianxun Liu Qian Sun Xumin Gao Yongjin Wang Hui Yang |
| author_sort | Wen Chen |
| collection | DOAJ |
| description | GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 μm × 5 μm. The double-sided dielectric distributed Bragg reflectors could form a high-quality optical resonant cavity, and the cavity modes exhibited a linewidth of 1 nm at the peak wavelength of around 405 nm, corresponding to a quality factor of 405. High data transmission in free space with an opening in the eye diagram was exhibited at 150 Mbps, which is limited by the detection system. These results showed that GaN-based RCLEDs grown on Si are promising as a low-cost emitter for visible light communications in future. |
| first_indexed | 2024-03-10T03:28:52Z |
| format | Article |
| id | doaj.art-509dc1005f074b44817af7b1cc7f429d |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T03:28:52Z |
| publishDate | 2021-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-509dc1005f074b44817af7b1cc7f429d2023-11-23T12:01:59ZengMDPI AGNanomaterials2079-49912021-12-0112113410.3390/nano12010134GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on SiWen Chen0Meixin Feng1Yongjun Tang2Jian Wang3Jianxun Liu4Qian Sun5Xumin Gao6Yongjin Wang7Hui Yang8Jiangxi Institute of Nanotechnology, Nanchang 330200, ChinaJiangxi Institute of Nanotechnology, Nanchang 330200, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaJiangxi Institute of Nanotechnology, Nanchang 330200, ChinaJiangxi Institute of Nanotechnology, Nanchang 330200, ChinaGrünberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaGrünberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaGaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 μm × 5 μm. The double-sided dielectric distributed Bragg reflectors could form a high-quality optical resonant cavity, and the cavity modes exhibited a linewidth of 1 nm at the peak wavelength of around 405 nm, corresponding to a quality factor of 405. High data transmission in free space with an opening in the eye diagram was exhibited at 150 Mbps, which is limited by the detection system. These results showed that GaN-based RCLEDs grown on Si are promising as a low-cost emitter for visible light communications in future.https://www.mdpi.com/2079-4991/12/1/134GaN-on-Siresonant-cavity light-emitting diodechemical-mechanical polishingvisible light communications |
| spellingShingle | Wen Chen Meixin Feng Yongjun Tang Jian Wang Jianxun Liu Qian Sun Xumin Gao Yongjin Wang Hui Yang GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si Nanomaterials GaN-on-Si resonant-cavity light-emitting diode chemical-mechanical polishing visible light communications |
| title | GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si |
| title_full | GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si |
| title_fullStr | GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si |
| title_full_unstemmed | GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si |
| title_short | GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si |
| title_sort | gan based resonant cavity light emitting diodes grown on si |
| topic | GaN-on-Si resonant-cavity light-emitting diode chemical-mechanical polishing visible light communications |
| url | https://www.mdpi.com/2079-4991/12/1/134 |
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