Structure and properties of Ta doped TiN films prepared using different sputtering powers for Ta target
Ta doped TiN films were prepared on glass substrates by DC magnetron co-sputtering. The structure and properties of the obtained (Ti,Ta)N film were characterized by X-ray diffraction, Raman spectroscopy, ultraviolet/visible/near-infrared spectrophotometer and four probes method. The results show tha...
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| Format: | Article |
| Language: | English |
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University of Novi Sad
2022-09-01
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| Series: | Processing and Application of Ceramics |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/1820-6131/2022/1820-61312203191W.pdf |
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| author | Wang Yuemeng Shi Xinwei Liu Miaomiao Yang Yifan Gao Qilong Zhu Bailin Xu Liujie |
| author_facet | Wang Yuemeng Shi Xinwei Liu Miaomiao Yang Yifan Gao Qilong Zhu Bailin Xu Liujie |
| author_sort | Wang Yuemeng |
| collection | DOAJ |
| description | Ta doped TiN films were prepared on glass substrates by DC magnetron co-sputtering. The structure and properties of the obtained (Ti,Ta)N film were characterized by X-ray diffraction, Raman spectroscopy, ultraviolet/visible/near-infrared spectrophotometer and four probes method. The results show that with the increase of the sputtering power (PTa) for Ta target, the amount of Ta added to TiN lattice increases, resulting in a slight distortion of TiN lattice and stress transformation in the film. Correspondingly, the optical and electrical properties of the film changed. Raman spectrum was deconvoluted into five Lorentz peaks in the range of 50-1400 cm−1 and a new Raman peak appeared in all samples due to the substitution of Ta for Ti. The analysis of deconvolution results shows that the peak positions of different phonon modes and FWHM change, which may be related to the change of stress in the thin films caused by adding Ta to TiN lattice. The sample prepared with power of 50W has the maximum infrared emissivity of 1.35 and 0.43 at 2.5 and 25 μm wavelengths, respectively, indicating that (Ti,Ta)N film is promising candidate for replacing TiN in Low-E glass. |
| first_indexed | 2024-04-13T22:28:25Z |
| format | Article |
| id | doaj.art-50d32b8b2d694682bf741c53ebdf73ec |
| institution | Directory Open Access Journal |
| issn | 1820-6131 2406-1034 |
| language | English |
| last_indexed | 2024-04-13T22:28:25Z |
| publishDate | 2022-09-01 |
| publisher | University of Novi Sad |
| record_format | Article |
| series | Processing and Application of Ceramics |
| spelling | doaj.art-50d32b8b2d694682bf741c53ebdf73ec2022-12-22T02:27:00ZengUniversity of Novi SadProcessing and Application of Ceramics1820-61312406-10342022-09-0116319120010.2298/PAC2203191WStructure and properties of Ta doped TiN films prepared using different sputtering powers for Ta targetWang Yuemeng0Shi Xinwei1Liu Miaomiao2Yang Yifan3Gao Qilong4Zhu Bailin5Xu Liujie6School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, ChinaSchool of Physics and Microelectronics, Zhengzhou University, Zhengzhou, ChinaSchool of Physics and Microelectronics, Zhengzhou University, Zhengzhou, ChinaSchool of Physics and Microelectronics, Zhengzhou University, Zhengzhou, ChinaSchool of Physics and Microelectronics, Zhengzhou University, Zhengzhou, ChinaThe State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, ChinaHenan Key Laboratory of High-temperature Structural and Functional Materials, Henan University of Science and Technology, Luoyang, ChinaTa doped TiN films were prepared on glass substrates by DC magnetron co-sputtering. The structure and properties of the obtained (Ti,Ta)N film were characterized by X-ray diffraction, Raman spectroscopy, ultraviolet/visible/near-infrared spectrophotometer and four probes method. The results show that with the increase of the sputtering power (PTa) for Ta target, the amount of Ta added to TiN lattice increases, resulting in a slight distortion of TiN lattice and stress transformation in the film. Correspondingly, the optical and electrical properties of the film changed. Raman spectrum was deconvoluted into five Lorentz peaks in the range of 50-1400 cm−1 and a new Raman peak appeared in all samples due to the substitution of Ta for Ti. The analysis of deconvolution results shows that the peak positions of different phonon modes and FWHM change, which may be related to the change of stress in the thin films caused by adding Ta to TiN lattice. The sample prepared with power of 50W has the maximum infrared emissivity of 1.35 and 0.43 at 2.5 and 25 μm wavelengths, respectively, indicating that (Ti,Ta)N film is promising candidate for replacing TiN in Low-E glass.http://www.doiserbia.nb.rs/img/doi/1820-6131/2022/1820-61312203191W.pdfco-sputteringlow-emission filmsraman spectroscopy(tita)n film |
| spellingShingle | Wang Yuemeng Shi Xinwei Liu Miaomiao Yang Yifan Gao Qilong Zhu Bailin Xu Liujie Structure and properties of Ta doped TiN films prepared using different sputtering powers for Ta target Processing and Application of Ceramics co-sputtering low-emission films raman spectroscopy (tita)n film |
| title | Structure and properties of Ta doped TiN films prepared using different sputtering powers for Ta target |
| title_full | Structure and properties of Ta doped TiN films prepared using different sputtering powers for Ta target |
| title_fullStr | Structure and properties of Ta doped TiN films prepared using different sputtering powers for Ta target |
| title_full_unstemmed | Structure and properties of Ta doped TiN films prepared using different sputtering powers for Ta target |
| title_short | Structure and properties of Ta doped TiN films prepared using different sputtering powers for Ta target |
| title_sort | structure and properties of ta doped tin films prepared using different sputtering powers for ta target |
| topic | co-sputtering low-emission films raman spectroscopy (tita)n film |
| url | http://www.doiserbia.nb.rs/img/doi/1820-6131/2022/1820-61312203191W.pdf |
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