Effects of Charge Trapping on Memory Characteristics for HfO<sub>2</sub>-Based Ferroelectric Field Effect Transistors

Effects of Charge Trapping on Memory Characteristics for HfO<sub>2</sub>-Based Ferroelectric Field Effect Transistors

A full understanding of the impact of charge trapping on the memory window (MW) of HfO<sub>2</sub>-based ferroelectric field effect transistors (FeFETs) will permit the design of program and erase protocols, which will guide the application of these devices and maximize their useful life...

Full description

Bibliographic Details
Main Authors: Jianjian Wang, Jinshun Bi, Yannan Xu, Gang Niu, Mengxin Liu, Viktor Stempitsky
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Nanomaterials
Subjects:
HfO<sub>2</sub>-based FeFET
charge trapping
ferroelectric switching
memory window
pulse amplitude
pulse width
Online Access:https://www.mdpi.com/2079-4991/13/4/638

Internet

https://www.mdpi.com/2079-4991/13/4/638

Similar Items