Activation of telecom emitters in silicon upon ion implantation and ns pulsed laser annealing

Activation of telecom emitters in silicon upon ion implantation and ns pulsed laser annealing

Abstract Recent demonstrations of optically active telecom emitters show that silicon is a compelling candidate for solid-state quantum photonic platforms. In particular, the fabrication of a defect known as the G center has been shown in carbon-rich silicon upon conventional thermal annealing. Howe...

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Bibliographic Details
Main Authors: Greta Andrini, Gabriele Zanelli, Sviatoslav Ditalia Tchernij, Emilio Corte, Elena Nieto Hernández, Alessio Verna, Matteo Cocuzza, Ettore Bernardi, Salvatore Virzì, Paolo Traina, Ivo P. Degiovanni, Marco Genovese, Paolo Olivero, Jacopo Forneris
Format: Article
Language:English
Published: Nature Portfolio 2024-04-01
Series:Communications Materials
Online Access:https://doi.org/10.1038/s43246-024-00486-4

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https://doi.org/10.1038/s43246-024-00486-4

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