The effect of sulfide content(x) on the electrical properties of (ZnSx Se1-x) thin films
Thin films of ZnSxSe1-x with different sulfide content(x) (0, 0.02, 0.04, 0.06, 0.8, and 0.1), thickness (t) (0.3, 0.5, and 0.7 μm) and annealing temperature (Ta) (R.T 373 and 423K) were fabricated by thermal evaporating under vacuum of 10-5 Toor on glass substrate. The results show that the increa...
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| Format: | Article |
| Language: | English |
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University of Baghdad
2012-10-01
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| Series: | Iraqi Journal of Physics |
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| Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/744 |