An Efficient 4H-SiC Photodiode for UV Sensing Applications
In this paper, we report experimental findings on a 4H-SiC-based p-i-n photodiode. The fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a nitrogen doped n-type layer. The dark reverse current density reaches 38.6 nA/cm<sup>2</sup> at −10 V, while the p...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-10-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/20/2517 |