Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model

Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model

This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE...

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Bibliographic Details
Main Authors: Renyi Li, Chen Ge, Chenwei Liang, Shichang Zhong
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Micromachines
Subjects:
GaN HEMT
EE_HEMT model
Doherty PA
Online Access:https://www.mdpi.com/2072-666X/15/3/388

Internet

https://www.mdpi.com/2072-666X/15/3/388

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