Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model
This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-03-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/3/388 |
| _version_ | 1827305569962164224 |
|---|---|
| author | Renyi Li Chen Ge Chenwei Liang Shichang Zhong |
| author_facet | Renyi Li Chen Ge Chenwei Liang Shichang Zhong |
| author_sort | Renyi Li |
| collection | DOAJ |
| description | This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios. |
| first_indexed | 2024-04-24T18:00:22Z |
| format | Article |
| id | doaj.art-5189567c266c415d9d3c6432320ebee5 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-04-24T18:00:22Z |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-5189567c266c415d9d3c6432320ebee52024-03-27T13:55:16ZengMDPI AGMicromachines2072-666X2024-03-0115338810.3390/mi15030388Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT ModelRenyi Li0Chen Ge1Chenwei Liang2Shichang Zhong3Nanjing Electronic Devices Institute, Nanjing 210016, ChinaNanjing Electronic Devices Institute, Nanjing 210016, ChinaNanjing Electronic Devices Institute, Nanjing 210016, ChinaNanjing Electronic Devices Institute, Nanjing 210016, ChinaThis paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios.https://www.mdpi.com/2072-666X/15/3/388GaN HEMTEE_HEMT modelDoherty PA |
| spellingShingle | Renyi Li Chen Ge Chenwei Liang Shichang Zhong Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model Micromachines GaN HEMT EE_HEMT model Doherty PA |
| title | Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model |
| title_full | Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model |
| title_fullStr | Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model |
| title_full_unstemmed | Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model |
| title_short | Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model |
| title_sort | design of inner matching three stage high power doherty power amplifier based on gan hemt model |
| topic | GaN HEMT EE_HEMT model Doherty PA |
| url | https://www.mdpi.com/2072-666X/15/3/388 |
| work_keys_str_mv | AT renyili designofinnermatchingthreestagehighpowerdohertypoweramplifierbasedonganhemtmodel AT chenge designofinnermatchingthreestagehighpowerdohertypoweramplifierbasedonganhemtmodel AT chenweiliang designofinnermatchingthreestagehighpowerdohertypoweramplifierbasedonganhemtmodel AT shichangzhong designofinnermatchingthreestagehighpowerdohertypoweramplifierbasedonganhemtmodel |