Effects of surface passivation dielectrics on carrier transport in AlGaN/GaN heterostructure field-effect transistors
Dielectric layers prepared by different deposition methods were used for the surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the corresponding electrical characteristics were examined. Increases in the sheet charge density and the maximum drain current by approx...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5027634 |