Read Reference Voltage Adaptation for NAND Flash Memories With Neural Networks Based on Sparse Histograms

Non-volatile NAND flash memories store information as an electrical charge. Different read reference voltages are applied to read the data. However, the threshold voltage distributions vary due to aging effects like program erase cycling and data retention time. It is necessary to adapt the read ref...

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Bibliographic Details
Main Authors: Daniel Nicolas Bailon, Sergo Shavgulidze, Jurgen Freudenberger
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10144751/