GaAs-based photonic integrated circuit platform enabling monolithic ring-resonator-coupled lasers

GaAs-based photonic integrated circuit platform enabling monolithic ring-resonator-coupled lasers

This paper reports on a monolithically integrated gallium arsenide (GaAs)-based photonic integrated circuit platform for wavelengths around 1064 nm. Enabled by spatially selective quantum well removal and two-step epitaxial growth, it supports on-chip gain as well as passive waveguides. In addition,...

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Bibliographic Details
Main Authors: Jan-Philipp Koester, Hans Wenzel, Jörg Fricke, Matthias Reggentin, Pietro Della Casa, Poojitha Sammeta, Olaf Brox, Michael Ekterai, Mario Kohlbrenner, Andreas Renkewitz, Christof Zink, Thomas Tenzler, Jos Boschker, Markus Weyers, Andrea Knigge
Format: Article
Language:English
Published: AIP Publishing LLC 2024-10-01
Series:APL Photonics
Online Access:http://dx.doi.org/10.1063/5.0223134

Internet

http://dx.doi.org/10.1063/5.0223134

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