Correction: Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer
2024-02-01
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| Series: | Discover Nano |
| Online Access: | https://doi.org/10.1186/s11671-024-03968-z |