Correction: Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study

Correction: Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study

Bibliographic Details
Main Authors:	Dariush Madadi, Saeed Mohammadi
Format:	Article
Language:	English
Published:	Springer 2024-02-01
Series:	Discover Nano
Online Access:	https://doi.org/10.1186/s11671-024-03968-z

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