The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs
Dynamic on-resistance (dR<sub>on</sub>), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no direct dR<sub>on</...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Open Journal of Power Electronics |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9130861/ |