The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs
Dynamic on-resistance (dR<sub>on</sub>), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no direct dR<sub>on</...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Open Journal of Power Electronics |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9130861/ |
| _version_ | 1829471512657133568 |
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| author | Grayson Zulauf Mattia Guacci Juan M. Rivas-Davila Johann W. Kolar |
| author_facet | Grayson Zulauf Mattia Guacci Juan M. Rivas-Davila Johann W. Kolar |
| author_sort | Grayson Zulauf |
| collection | DOAJ |
| description | Dynamic on-resistance (dR<sub>on</sub>), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no direct dR<sub>on</sub> measurements in the literature above 1 MHz, leaving designers unable to predict conduction losses in emerging multi-MHz applications. We address this literature gap by collecting the first on-state voltage dR<sub>on</sub> measurements at multi-MHz frequencies, with a focus on the zero-voltage-switching conditions that are predominantly employed at high frequency. On the selected commercially-available HEMT with a breakdown voltage below 200 V, the dynamic contribution asymptotes above ≈ 2 MHz, a finding predicted by the slow time constants of the traps that cause dR<sub>on</sub>. For the tested HEMT, we find a maximum dR<sub>on</sub> increase over the DC resistance of 2× in a multi-MHz, zero-voltage-switched application. |
| first_indexed | 2024-12-14T01:58:30Z |
| format | Article |
| id | doaj.art-51ce59898a6a4791b875187c0d42ba2f |
| institution | Directory Open Access Journal |
| issn | 2644-1314 |
| language | English |
| last_indexed | 2024-12-14T01:58:30Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Open Journal of Power Electronics |
| spelling | doaj.art-51ce59898a6a4791b875187c0d42ba2f2022-12-21T23:21:06ZengIEEEIEEE Open Journal of Power Electronics2644-13142020-01-01121021510.1109/OJPEL.2020.30058799130861The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTsGrayson Zulauf0https://orcid.org/0000-0001-7180-002XMattia Guacci1https://orcid.org/0000-0003-3049-1368Juan M. Rivas-Davila2https://orcid.org/0000-0003-2494-8579Johann W. Kolar3https://orcid.org/0000-0002-6000-7402SUPER Lab, Stanford University, Stanford, CA, USAPower Electronic Systems Laboratory, ETH Zurich, Zurich, SwitzerlandSUPER Lab, Stanford University, Stanford, CA, USAPower Electronic Systems Laboratory, ETH Zurich, Zurich, SwitzerlandDynamic on-resistance (dR<sub>on</sub>), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no direct dR<sub>on</sub> measurements in the literature above 1 MHz, leaving designers unable to predict conduction losses in emerging multi-MHz applications. We address this literature gap by collecting the first on-state voltage dR<sub>on</sub> measurements at multi-MHz frequencies, with a focus on the zero-voltage-switching conditions that are predominantly employed at high frequency. On the selected commercially-available HEMT with a breakdown voltage below 200 V, the dynamic contribution asymptotes above ≈ 2 MHz, a finding predicted by the slow time constants of the traps that cause dR<sub>on</sub>. For the tested HEMT, we find a maximum dR<sub>on</sub> increase over the DC resistance of 2× in a multi-MHz, zero-voltage-switched application.https://ieeexplore.ieee.org/document/9130861/Dynamic on-state resistancegallium nitridepower transistorswide bandgap semiconductors |
| spellingShingle | Grayson Zulauf Mattia Guacci Juan M. Rivas-Davila Johann W. Kolar The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs IEEE Open Journal of Power Electronics Dynamic on-state resistance gallium nitride power transistors wide bandgap semiconductors |
| title | The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs |
| title_full | The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs |
| title_fullStr | The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs |
| title_full_unstemmed | The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs |
| title_short | The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs |
| title_sort | impact of multi mhz switching frequencies on dynamic on resistance in gan on si hemts |
| topic | Dynamic on-state resistance gallium nitride power transistors wide bandgap semiconductors |
| url | https://ieeexplore.ieee.org/document/9130861/ |
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