Effect of intentional chemical doping on crystallographic and electric properties of the pyrochlore Bi2Sn2O7

Effect of intentional chemical doping on crystallographic and electric properties of the pyrochlore Bi2Sn2O7

The development of p-type oxide semiconductors is challenging owing to the localized nature of the valence band maximum (VBM), which primarily comprises O 2p orbitals. Although some Sn2+-based pyrochlore-type oxides (A2B2O7) with VBMs comprising spatially spread Sn 5s orbitals show p-type semiconduc...

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Bibliographic Details
Main Authors: Makoto Minohara, Naoto Kikuchi, Kouhei Tsukuda, Yuka Dobashi, Akane Samizo, Keishi Nishio, Xinyi He, Takayoshi Katase, Toshio Kamiya, Yoshihiro Aiura
Format: Article
Language:English
Published: Elsevier 2022-04-01
Series:Materials & Design
Subjects:
Bi2Sn2O7
Semiconductor
Substitutional doping
Oxygen vacancies
X-ray absorption spectroscopy
Online Access:http://www.sciencedirect.com/science/article/pii/S0264127522001708

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http://www.sciencedirect.com/science/article/pii/S0264127522001708

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