The Relationship between Electron Transport and Microstructure in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Alloy

The Relationship between Electron Transport and Microstructure in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Alloy

Phase-change random-access memory (PCRAM) holds great promise for next-generation information storage applications. As a mature phase change material, Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> alloy (GST) relies on the distinct electrical properties of different...

Полное описание

Библиографические подробности
Главные авторы: Cheng Liu, Yonghui Zheng, Tianjiao Xin, Yunzhe Zheng, Rui Wang, Yan Cheng
Формат: Статья
Язык:English
Опубликовано: MDPI AG 2023-01-01
Серии:Nanomaterials
Предметы:
phase change memory
Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>
phase transition
electron transport
Online-ссылка:https://www.mdpi.com/2079-4991/13/3/582

Internet

https://www.mdpi.com/2079-4991/13/3/582

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