Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate
Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown v...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2018-06-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379718307058 |