Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability

Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability

The topological insulator 2D Bi<sub>2</sub>Se<sub>3</sub> is promising for electronic devices due to its unique electronic properties; however, it is challenging to prepare antioxidative nanosheets since Bi<sub>2</sub>Se<sub>3</sub> is prone to oxidati...

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Bibliographic Details
Main Authors: Jiayi Chen, Guodong Wu, Yamei Ding, Qichao Chen, Wenya Gao, Tuo Zhang, Xu Jing, Huiwen Lin, Feng Xue, Li Tao
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Nanomaterials
Subjects:
two-dimensional materials
bismuth selenide
antioxidation
field-effect transistors
Online Access:https://www.mdpi.com/2079-4991/13/14/2056

Internet

https://www.mdpi.com/2079-4991/13/14/2056

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