Feasibility of Quasi-Square-Wave Zero-Voltage-Switching Bi-Directional DC/DC Converters with GaN HEMTs
There are trade-offs for each power converter design which are mainly dictated by the switching component and passive component ratings. Recent power electronic devices such as Gallium Nitride (GaN) transistors can improve the application range of power converter topologies with lower conduction and...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/14/10/2867 |