Switching and memory effects in thin film disoder chalcoginide semiconductors
The possibility of creation of thin film memory elements and threshold switching elements on the base of one chalcogenide - tellurium is analyzed in the proposed article.
| Autors principals: | , |
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| Format: | Article |
| Idioma: | Russian |
| Publicat: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Col·lecció: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Matèries: | |
| Accés en línia: | https://doklady.bsuir.by/jour/article/view/1075 |