In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD

In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD

In(Ga)N epitaxial layers were grown on on-axis and off-axis (0001) sapphire substrates with an about 1100 nm-thick GaN buffer layer stack using organometallic chemical vapor deposition at 600 °C. The In(Ga)N layers consisted of a thin (~10–25 nm) continuous layer of small conical pyramids in which l...

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Bibliographic Details
Main Authors: Alica Rosová, Edmund Dobročka, Peter Eliáš, Stanislav Hasenöhrl, Michal Kučera, Filip Gucmann, Ján Kuzmík
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Nanomaterials
Subjects:
InN
InGaN
quantum dots
epitaxial growth
self-assembly
III-N semiconductors
Online Access:https://www.mdpi.com/2079-4991/12/19/3496

Internet

https://www.mdpi.com/2079-4991/12/19/3496

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