Effect of gamma irradiation dose on the structure and pH sensitivity of ITO thin films in extended gate field effect transistor
Even though several studies have demonstrated the use of Indium Tin Oxides (ITO) as an extended gate field effect transistor (EGFET), the effect of different doses of gamma radiation on the intrinsic properties of the ITO films has not been considered. This study investigates the effect of gamma irr...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019-03-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379718323878 |