Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors
Compared with conventional silicon-based semiconductors, amorphous oxide semiconductors present several advantages, including the possibility of room-temperature fabrication, excellent uniformity, high transmittance, and high electron mobility. Notably, the application of oxide semiconductors to fle...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-09-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/19/3094 |