Junctionless Biristor: A Bistable Resistor Without Chemically Doped P-N Junctions
In this paper, using 2-D simulations, we report a novel junction-less biristor in which the emitter and collector regions are created by applying the charge plasma concept on a P-doped silicon film. Since no chemical doping is required, the junction-less biristor can be realized with a low thermal b...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2015-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7076587/ |