Junctionless Biristor: A Bistable Resistor Without Chemically Doped P-N Junctions
In this paper, using 2-D simulations, we report a novel junction-less biristor in which the emitter and collector regions are created by applying the charge plasma concept on a P-doped silicon film. Since no chemical doping is required, the junction-less biristor can be realized with a low thermal b...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IEEE
2015-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7076587/ |
| _version_ | 1818619465163603968 |
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| author | Mamidala Jagadesh Kumar Maram Maheedhar P. Pradeep Varma |
| author_facet | Mamidala Jagadesh Kumar Maram Maheedhar P. Pradeep Varma |
| author_sort | Mamidala Jagadesh Kumar |
| collection | DOAJ |
| description | In this paper, using 2-D simulations, we report a novel junction-less biristor in which the emitter and collector regions are created by applying the charge plasma concept on a P-doped silicon film. Since no chemical doping is required, the junction-less biristor can be realized with a low thermal budget. We demonstrate that the junction-less biristor exhibits not only a significant low latch-up voltage (2.0 V) but also has a large latch window (0.66 V) when compared to that of a conventional silicon biristor with similar parameters. The reasons for this improved performance are discussed. |
| first_indexed | 2024-12-16T17:37:55Z |
| format | Article |
| id | doaj.art-52a32ef62ef7468b8167f138716f0bd8 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-16T17:37:55Z |
| publishDate | 2015-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-52a32ef62ef7468b8167f138716f0bd82022-12-21T22:22:40ZengIEEEIEEE Journal of the Electron Devices Society2168-67342015-01-013431131510.1109/JEDS.2015.24187547076587Junctionless Biristor: A Bistable Resistor Without Chemically Doped P-N JunctionsMamidala Jagadesh Kumar0Maram Maheedhar1P. Pradeep Varma2Department of Electrical Engineering, Indian Institute of Technology, New Delhi, IndiaDepartment of Electrical Engineering, Indian Institute of Technology, New Delhi, IndiaDepartment of Electrical Engineering, Indian Institute of Technology, New Delhi, IndiaIn this paper, using 2-D simulations, we report a novel junction-less biristor in which the emitter and collector regions are created by applying the charge plasma concept on a P-doped silicon film. Since no chemical doping is required, the junction-less biristor can be realized with a low thermal budget. We demonstrate that the junction-less biristor exhibits not only a significant low latch-up voltage (2.0 V) but also has a large latch window (0.66 V) when compared to that of a conventional silicon biristor with similar parameters. The reasons for this improved performance are discussed.https://ieeexplore.ieee.org/document/7076587/biristorjunction-lessbistable resistorcurrent gainSALTran effect |
| spellingShingle | Mamidala Jagadesh Kumar Maram Maheedhar P. Pradeep Varma Junctionless Biristor: A Bistable Resistor Without Chemically Doped P-N Junctions IEEE Journal of the Electron Devices Society biristor junction-less bistable resistor current gain SALTran effect |
| title | Junctionless Biristor: A Bistable Resistor Without Chemically Doped P-N Junctions |
| title_full | Junctionless Biristor: A Bistable Resistor Without Chemically Doped P-N Junctions |
| title_fullStr | Junctionless Biristor: A Bistable Resistor Without Chemically Doped P-N Junctions |
| title_full_unstemmed | Junctionless Biristor: A Bistable Resistor Without Chemically Doped P-N Junctions |
| title_short | Junctionless Biristor: A Bistable Resistor Without Chemically Doped P-N Junctions |
| title_sort | junctionless biristor a bistable resistor without chemically doped p n junctions |
| topic | biristor junction-less bistable resistor current gain SALTran effect |
| url | https://ieeexplore.ieee.org/document/7076587/ |
| work_keys_str_mv | AT mamidalajagadeshkumar junctionlessbiristorabistableresistorwithoutchemicallydopedpnjunctions AT marammaheedhar junctionlessbiristorabistableresistorwithoutchemicallydopedpnjunctions AT ppradeepvarma junctionlessbiristorabistableresistorwithoutchemicallydopedpnjunctions |