Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN Material

Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN Material

Functional devices that use vertical van der Waals (vdWs) heterostructure material can effectively combine the properties of single component materials, and the strong interlayer coupling effect can change their electronic and optical properties. According to our research, WS<sub>2</sub>...

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Bibliographic Details
Main Authors: Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang, Kun Yang
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Micromachines
Subjects:
WS<sub>2</sub>
h-BN
vdWs heterostructure
characterization
FET
Online Access:https://www.mdpi.com/2072-666X/12/9/1006

Internet

https://www.mdpi.com/2072-666X/12/9/1006

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