Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN Material
Functional devices that use vertical van der Waals (vdWs) heterostructure material can effectively combine the properties of single component materials, and the strong interlayer coupling effect can change their electronic and optical properties. According to our research, WS<sub>2</sub>...
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MDPI AG
2021-08-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/9/1006 |
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| author | Tao Han Hongxia Liu Shupeng Chen Shulong Wang Kun Yang |
| author_facet | Tao Han Hongxia Liu Shupeng Chen Shulong Wang Kun Yang |
| author_sort | Tao Han |
| collection | DOAJ |
| description | Functional devices that use vertical van der Waals (vdWs) heterostructure material can effectively combine the properties of single component materials, and the strong interlayer coupling effect can change their electronic and optical properties. According to our research, WS<sub>2</sub>/h-BN vertical vdWs heterostructure material can be synthesized by chemical vapor deposition (CVD) and wet transfer methods. Monolayer WS<sub>2</sub> material and WS<sub>2</sub>/h-BN vertical vdWs heterostructure material can be tested and characterized using XPS, SEM, EDS, AFM and Raman spectroscopy, which can prove the existence of corresponding materials. When the thickness of the material decreases, the Coulomb scattering amongst two-dimensional (2D) layered materials increases. This is because both the shielding effect and the distance between the channel and the interface layer decrease. FET devices are then fabricated on WS<sub>2</sub>/h-BN vdWs heterostructure material by the electron beam lithography and evaporation processes. The effects of vdWs epitaxy on electrical transmission when WS<sub>2</sub>/h-BN vdWs heterostructure material is formed are explored. Finally, the related electrical performance of FET devices is tested and analyzed. Our experimental research provides guidance for the use of electronic devices with vdWs heterostructure material. |
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| id | doaj.art-52af9325003c44a38a289628e523be1a |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T07:26:00Z |
| publishDate | 2021-08-01 |
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| spelling | doaj.art-52af9325003c44a38a289628e523be1a2023-11-22T14:15:09ZengMDPI AGMicromachines2072-666X2021-08-01129100610.3390/mi12091006Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN MaterialTao Han0Hongxia Liu1Shupeng Chen2Shulong Wang3Kun Yang4Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, ChinaFunctional devices that use vertical van der Waals (vdWs) heterostructure material can effectively combine the properties of single component materials, and the strong interlayer coupling effect can change their electronic and optical properties. According to our research, WS<sub>2</sub>/h-BN vertical vdWs heterostructure material can be synthesized by chemical vapor deposition (CVD) and wet transfer methods. Monolayer WS<sub>2</sub> material and WS<sub>2</sub>/h-BN vertical vdWs heterostructure material can be tested and characterized using XPS, SEM, EDS, AFM and Raman spectroscopy, which can prove the existence of corresponding materials. When the thickness of the material decreases, the Coulomb scattering amongst two-dimensional (2D) layered materials increases. This is because both the shielding effect and the distance between the channel and the interface layer decrease. FET devices are then fabricated on WS<sub>2</sub>/h-BN vdWs heterostructure material by the electron beam lithography and evaporation processes. The effects of vdWs epitaxy on electrical transmission when WS<sub>2</sub>/h-BN vdWs heterostructure material is formed are explored. Finally, the related electrical performance of FET devices is tested and analyzed. Our experimental research provides guidance for the use of electronic devices with vdWs heterostructure material.https://www.mdpi.com/2072-666X/12/9/1006WS<sub>2</sub>h-BNvdWs heterostructurecharacterizationFET |
| spellingShingle | Tao Han Hongxia Liu Shupeng Chen Shulong Wang Kun Yang Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN Material Micromachines WS<sub>2</sub> h-BN vdWs heterostructure characterization FET |
| title | Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN Material |
| title_full | Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN Material |
| title_fullStr | Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN Material |
| title_full_unstemmed | Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN Material |
| title_short | Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN Material |
| title_sort | preparation and research of monolayer ws sub 2 sub fets encapsulated by h bn material |
| topic | WS<sub>2</sub> h-BN vdWs heterostructure characterization FET |
| url | https://www.mdpi.com/2072-666X/12/9/1006 |
| work_keys_str_mv | AT taohan preparationandresearchofmonolayerwssub2subfetsencapsulatedbyhbnmaterial AT hongxialiu preparationandresearchofmonolayerwssub2subfetsencapsulatedbyhbnmaterial AT shupengchen preparationandresearchofmonolayerwssub2subfetsencapsulatedbyhbnmaterial AT shulongwang preparationandresearchofmonolayerwssub2subfetsencapsulatedbyhbnmaterial AT kunyang preparationandresearchofmonolayerwssub2subfetsencapsulatedbyhbnmaterial |