Growth of polycrystalline gallium oxide films in stagnant oxygen stream ambient

Structural, morphological, optical, and electrical characteristics of polycrystalline gallium oxide (Ga2O3) films subjected to different post-deposition annealing temperatures (400–1000 °C) in a stagnant oxygen stream ambient were systematically studied. The transformation from γ-Ga2O3 to β-Ga2O3 ph...

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Bibliographic Details
Main Authors: Puteri Haslinda Megat Abdul Hedei, Zainuriah Hassan, Hock Jin Quah
Format: Article
Language:English
Published: Elsevier 2022-01-01
Series:Journal of Materials Research and Technology
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785421014411