DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy

DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy

This study developed a DC-free technique that used dark-mode scanning capacitance microscopy (DM-SCM) with a small-area contact electrode to evaluate and image equivalent oxide thicknesses (EOTs). In contrast to the conventional capacitance–voltage (C–V) method, which requires a large-area contact e...

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Bibliographic Details
Main Authors: Mao-Nan Chang, Yi-Shan Wu, Chiao-Jung Lin, Yu-Hsun Hsueh, Chun-Jung Su, Yao-Jen Lee
Format: Article
Language:English
Published: MDPI AG 2024-05-01
Series:Nanomaterials
Subjects:
scanning capacitance microscopy
equivalent oxide thickness
high-k
DC stress
mapping
Online Access:https://www.mdpi.com/2079-4991/14/11/934

Internet

https://www.mdpi.com/2079-4991/14/11/934

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