SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

Quantum-dot spin qubits in Si/SiGe quantum wells require a large and uniform valley splitting for robust operation and scalability. Here the authors introduce and characterize a new heterostructure with periodic oscillations of Ge atoms in the quantum well, which could enhance the valley splitting.

Bibliographic Details
Main Authors: Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman, J. P. Dodson, M. A. Wolfe, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Robert Joynt, M. A. Eriksson
Format: Article
Language:English
Published: Nature Portfolio 2022-12-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-022-35510-z

Internet

https://doi.org/10.1038/s41467-022-35510-z

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