Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal−insulator−semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of norma...

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Bibliographic Details
Main Authors: Dongmin Keum, Hyungtak Kim
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Micromachines
Subjects:
algan/gan
proton irradiation
time-dependent dielectric breakdown (tddb)
reliability
normally off
Online Access:https://www.mdpi.com/2072-666X/10/11/723

Internet

https://www.mdpi.com/2072-666X/10/11/723

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