Selective chemical etching for termination layer control of BaSnO3 and 2DEG formation at the LaInO3/BaSnO3 interface
An ex situ chemical etching method was developed to achieve a SnO2-terminated surface in BaSnO3 films. An SnO2-terminated surface is crucial for the formation of a (LaO)+/(SnO2)0 interface structure to form the two-dimensional electron gas (2DEG) state at the LaInO3 (LIO)/BaSnO3 (BSO) interface. By...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0173833 |