Scalable Small Signal and Noise Modeling of InP HEMT for THz Application

Scalable Small Signal and Noise Modeling of InP HEMT for THz Application

Scalable small signal and noise modeling for 90nm InP high electron mobility transistor (HEMT) is proposed in this paper. Analytical expressions for the noise parameters of the intrinsic part are derived from an accurate small signal and noise equivalent circuit model. The experimental and theoretic...

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Bibliographic Details
Main Authors: Ao Zhang, Jianjun Gao
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Equivalent circuit model
high electron mobility transistor
semiconductor device modeling
parameter extraction
noise modeling
Online Access:https://ieeexplore.ieee.org/document/10147218/

Internet

https://ieeexplore.ieee.org/document/10147218/

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