Scalable Small Signal and Noise Modeling of InP HEMT for THz Application
Scalable small signal and noise modeling for 90nm InP high electron mobility transistor (HEMT) is proposed in this paper. Analytical expressions for the noise parameters of the intrinsic part are derived from an accurate small signal and noise equivalent circuit model. The experimental and theoretic...
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10147218/ |
| _version_ | 1797797261352108032 |
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| author | Ao Zhang Jianjun Gao |
| author_facet | Ao Zhang Jianjun Gao |
| author_sort | Ao Zhang |
| collection | DOAJ |
| description | Scalable small signal and noise modeling for 90nm InP high electron mobility transistor (HEMT) is proposed in this paper. Analytical expressions for the noise parameters of the intrinsic part are derived from an accurate small signal and noise equivalent circuit model. The experimental and theoretical results show that at the same bias condition, good scaling can be achieved between the HEMTs with different gate widths. Model verification is carried out by comparison of measured and simulated S-parameters up to 325 GHz and noise parameters up to 40GHz. Good agreement is obtained for 90 nm gate-length devices of gate widths including <inline-formula> <tex-math notation="LaTeX">$2\times 15\,\,\mu \text{m}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$2\times 20\,\,\mu \text{m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$2\times 25\,\,\mu \text{m}$ </tex-math></inline-formula> gate width (number of gate fingers <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula>unit gate width <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula>cells). The proposed model can be used to predict the S-parameters and noise performance of HEMTs with different geometry accurately. |
| first_indexed | 2024-03-13T03:45:29Z |
| format | Article |
| id | doaj.art-539e39c28d5d4c12b3f2ad547d3a3da4 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-13T03:45:29Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-539e39c28d5d4c12b3f2ad547d3a3da42023-06-22T23:00:22ZengIEEEIEEE Journal of the Electron Devices Society2168-67342023-01-011134735310.1109/JEDS.2023.328448510147218Scalable Small Signal and Noise Modeling of InP HEMT for THz ApplicationAo Zhang0https://orcid.org/0000-0002-1552-2763Jianjun Gao1https://orcid.org/0000-0002-9178-4773School of Transportation and Civil Engineering, Nantong University, Nantong, ChinaSchool of Physics and Electronic Science, East China Normal University, Shanghai, ChinaScalable small signal and noise modeling for 90nm InP high electron mobility transistor (HEMT) is proposed in this paper. Analytical expressions for the noise parameters of the intrinsic part are derived from an accurate small signal and noise equivalent circuit model. The experimental and theoretical results show that at the same bias condition, good scaling can be achieved between the HEMTs with different gate widths. Model verification is carried out by comparison of measured and simulated S-parameters up to 325 GHz and noise parameters up to 40GHz. Good agreement is obtained for 90 nm gate-length devices of gate widths including <inline-formula> <tex-math notation="LaTeX">$2\times 15\,\,\mu \text{m}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$2\times 20\,\,\mu \text{m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$2\times 25\,\,\mu \text{m}$ </tex-math></inline-formula> gate width (number of gate fingers <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula>unit gate width <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula>cells). The proposed model can be used to predict the S-parameters and noise performance of HEMTs with different geometry accurately.https://ieeexplore.ieee.org/document/10147218/Equivalent circuit modelhigh electron mobility transistorsemiconductor device modelingparameter extractionnoise modeling |
| spellingShingle | Ao Zhang Jianjun Gao Scalable Small Signal and Noise Modeling of InP HEMT for THz Application IEEE Journal of the Electron Devices Society Equivalent circuit model high electron mobility transistor semiconductor device modeling parameter extraction noise modeling |
| title | Scalable Small Signal and Noise Modeling of InP HEMT for THz Application |
| title_full | Scalable Small Signal and Noise Modeling of InP HEMT for THz Application |
| title_fullStr | Scalable Small Signal and Noise Modeling of InP HEMT for THz Application |
| title_full_unstemmed | Scalable Small Signal and Noise Modeling of InP HEMT for THz Application |
| title_short | Scalable Small Signal and Noise Modeling of InP HEMT for THz Application |
| title_sort | scalable small signal and noise modeling of inp hemt for thz application |
| topic | Equivalent circuit model high electron mobility transistor semiconductor device modeling parameter extraction noise modeling |
| url | https://ieeexplore.ieee.org/document/10147218/ |
| work_keys_str_mv | AT aozhang scalablesmallsignalandnoisemodelingofinphemtforthzapplication AT jianjungao scalablesmallsignalandnoisemodelingofinphemtforthzapplication |