Scalable Small Signal and Noise Modeling of InP HEMT for THz Application
Scalable small signal and noise modeling for 90nm InP high electron mobility transistor (HEMT) is proposed in this paper. Analytical expressions for the noise parameters of the intrinsic part are derived from an accurate small signal and noise equivalent circuit model. The experimental and theoretic...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10147218/ |