Effects of Oxygen Flow Rate on Metal-to-Insulator Transition Characteristics in NbO<sub>x</sub>-Based Selectors

In this work, NbOx-based selector devices were fabricated by sputtering deposition systems. Metal-to-insulator transition characteristics of the device samples were investigated depending on the oxygen flow rate (3.5, 4.5, and 5.5 sccm) and the deposition time. The device stack was scanned by transm...

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Bibliographic Details
Main Authors: Osung Kwon, Hongmin Lee, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/15/23/8575