Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics

Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics

Abstract 2D semiconductors show promise as a competitive candidate for developing future integrated circuits due to their immunity to short‐channel effects and high carrier mobility at atomic layer thicknesses. The inherent defects and Fermi level pinning effect lead to n‐type transport characterist...

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Bibliographic Details
Main Authors: Guitian Qiu, Lingan Kong, Mengjiao Han, Qian Zhang, Majeed Ur Rehman, Jianxian Yi, Lede Xian, Xiankai Lin, Aumber Abbas, Jiwei Chen, Yingjie Luo, Wenbo Li, Zhongchao Wei, Hongyun Meng, Xiuliang Ma, Qijie Liang
Format: Article
Language:English
Published: Wiley 2024-12-01
Series:Advanced Science
Subjects:
CMOS devices
hole doping
intralayer/interlayer codoping
large‐area devices
superior air stability
Online Access:https://doi.org/10.1002/advs.202408634

Internet

https://doi.org/10.1002/advs.202408634

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