The Structural Evolution of Semipolar (11−22) Plane AlN Tem-Plate on <i>m</i>-Plane Sapphire Prepared by Sputtering and High Temperature Annealing
In this work, the epitaxial semipolar (11–22) AlN was prepared on nonpolar <i>m</i>-sapphire substrate by combining sputtering and high-temperature annealing. According to our systematic measurements and analysis from XRD, Raman spectra, and AFM, the evolution of crystalline structure an...
Main Authors: | , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-04-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/15/8/2945 |