Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface oxidation and the oxide layer removal. The oxidan...

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Bibliographic Details
Main Authors: Chi-Hsiang Hsieh, Che-Yuan Chang, Yi-Kai Hsiao, Chao-Chang A. Chen, Chang-Ching Tu, Hao-Chung Kuo
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Micromachines
Subjects:
Silicon Carbide (SiC)
chemical mechanical polishing (CMP)
hybrid CMP
post-CMP cleaning
Online Access:https://www.mdpi.com/2072-666X/13/10/1752

Internet

https://www.mdpi.com/2072-666X/13/10/1752

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