Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C)
Ferroelectricity and crystallinity of TiN/ZrO2/HfxZr1−xO2 (Hf:Zr = 0.43:0.57; HZO)/SiO2/Si metal–ferroelectric–semiconductor (MFS) capacitors with a top ZrO2 nucleation layer fabricated by low-temperature processes at 300 °C of atomic layer deposition and post-metallization annealing (PMA) were syst...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0091661 |