Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C)
Ferroelectricity and crystallinity of TiN/ZrO2/HfxZr1−xO2 (Hf:Zr = 0.43:0.57; HZO)/SiO2/Si metal–ferroelectric–semiconductor (MFS) capacitors with a top ZrO2 nucleation layer fabricated by low-temperature processes at 300 °C of atomic layer deposition and post-metallization annealing (PMA) were syst...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2022-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0091661 |
| _version_ | 1811249371170209792 |
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| author | Takashi Onaya Toshihide Nabatame Mari Inoue Tomomi Sawada Hiroyuki Ota Yukinori Morita |
| author_facet | Takashi Onaya Toshihide Nabatame Mari Inoue Tomomi Sawada Hiroyuki Ota Yukinori Morita |
| author_sort | Takashi Onaya |
| collection | DOAJ |
| description | Ferroelectricity and crystallinity of TiN/ZrO2/HfxZr1−xO2 (Hf:Zr = 0.43:0.57; HZO)/SiO2/Si metal–ferroelectric–semiconductor (MFS) capacitors with a top ZrO2 nucleation layer fabricated by low-temperature processes at 300 °C of atomic layer deposition and post-metallization annealing (PMA) were systematically investigated. The HZO (10 nm)-based MFS capacitors without (w/o) and with 2- and 10-nm-thick ZrO2 films (ZrO2-2 nm and ZrO2-10 nm, respectively) were found to form an extremely thin SiO2 interfacial layer (SiO2-IL) with a thickness of one or two monolayers. The HZO film in the TiN/ZrO2/HZO/SiO2/Si capacitors formed the ferroelectric orthorhombic phase even with a low thermal budget of 300 °C; in contrast, that of the w/o capacitor exhibited a predominantly amorphous structure. This result is attributed to the polycrystalline ZrO2 film acting as a nucleation layer for the crystallization of an amorphous HZO film during PMA treatment. Therefore, the remnant polarization (2Pr) increased in the order of w/o (2.2 µC/cm2) < ZrO2-2 nm (6.8 µC/cm2) < ZrO2-10 nm (15 µC/cm2). The endurance properties of the ZrO2-10 nm capacitor were free from the wake-up effect and exhibited less degradation because of the insertion of a thick ZrO2 film of 10 nm at the TiN/HZO interface, which promoted the preferential formation of the ferroelectric orthorhombic phase and prevented the formation of oxygen vacancies at the ZrO2/HZO interface. These results suggest that superior ferroelectricity with wake-up-free properties and higher fatigue resistance of HZO-based MFS capacitors can be achieved by a low-temperature fabrication technique (300 °C) using a top ZrO2 nucleation layer. |
| first_indexed | 2024-04-12T15:45:21Z |
| format | Article |
| id | doaj.art-540125ad3abc4c3786753390ceef2ecc |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-12T15:45:21Z |
| publishDate | 2022-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-540125ad3abc4c3786753390ceef2ecc2022-12-22T03:26:41ZengAIP Publishing LLCAPL Materials2166-532X2022-05-01105051110051110-710.1063/5.0091661Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C)Takashi Onaya0Toshihide Nabatame1Mari Inoue2Tomomi Sawada3Hiroyuki Ota4Yukinori Morita5National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JapanNational Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanNational Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanNational Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanNational Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JapanNational Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JapanFerroelectricity and crystallinity of TiN/ZrO2/HfxZr1−xO2 (Hf:Zr = 0.43:0.57; HZO)/SiO2/Si metal–ferroelectric–semiconductor (MFS) capacitors with a top ZrO2 nucleation layer fabricated by low-temperature processes at 300 °C of atomic layer deposition and post-metallization annealing (PMA) were systematically investigated. The HZO (10 nm)-based MFS capacitors without (w/o) and with 2- and 10-nm-thick ZrO2 films (ZrO2-2 nm and ZrO2-10 nm, respectively) were found to form an extremely thin SiO2 interfacial layer (SiO2-IL) with a thickness of one or two monolayers. The HZO film in the TiN/ZrO2/HZO/SiO2/Si capacitors formed the ferroelectric orthorhombic phase even with a low thermal budget of 300 °C; in contrast, that of the w/o capacitor exhibited a predominantly amorphous structure. This result is attributed to the polycrystalline ZrO2 film acting as a nucleation layer for the crystallization of an amorphous HZO film during PMA treatment. Therefore, the remnant polarization (2Pr) increased in the order of w/o (2.2 µC/cm2) < ZrO2-2 nm (6.8 µC/cm2) < ZrO2-10 nm (15 µC/cm2). The endurance properties of the ZrO2-10 nm capacitor were free from the wake-up effect and exhibited less degradation because of the insertion of a thick ZrO2 film of 10 nm at the TiN/HZO interface, which promoted the preferential formation of the ferroelectric orthorhombic phase and prevented the formation of oxygen vacancies at the ZrO2/HZO interface. These results suggest that superior ferroelectricity with wake-up-free properties and higher fatigue resistance of HZO-based MFS capacitors can be achieved by a low-temperature fabrication technique (300 °C) using a top ZrO2 nucleation layer.http://dx.doi.org/10.1063/5.0091661 |
| spellingShingle | Takashi Onaya Toshihide Nabatame Mari Inoue Tomomi Sawada Hiroyuki Ota Yukinori Morita Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) APL Materials |
| title | Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) |
| title_full | Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) |
| title_fullStr | Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) |
| title_full_unstemmed | Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) |
| title_short | Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) |
| title_sort | wake up free properties and high fatigue resistance of hfxzr1 xo2 based metal ferroelectric semiconductor using top zro2 nucleation layer at low thermal budget 300 °c |
| url | http://dx.doi.org/10.1063/5.0091661 |
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