An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN

An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN

For the development of III-nitride-semiconductor-based monolithic micro-light-emitting diode (LED) displays, Eu,O-codoped GaN (GaN:Eu,O) is a promising material candidate for the red LEDs. The luminescence efficiency of Eu-related emission strongly depends on the local atomic structure of Eu ions. O...

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Bibliographic Details
Main Authors: Takenori Iwaya, Shuhei Ichikawa, Volkmar Dierolf, Brandon Mitchell, Hayley Austin, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara
Format: Article
Language:English
Published: AIP Publishing LLC 2024-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0183774

Internet

http://dx.doi.org/10.1063/5.0183774

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