Theoretical Study of Doping in GaOOH for Electronics Applications
GaOOH, having a bandgap of 4.7–4.9 eV, can be regarded as one of several ultrawide-bandgap (UWBG) semiconductors, although it has so far mainly been used as a precursor material of Ga<sub>2</sub>O<sub>3</sub>. To examine the possibility of valence control and application in e...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-11-01
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| Series: | Electronic Materials |
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| Online Access: | https://www.mdpi.com/2673-3978/4/4/13 |