Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block
SiC crystal is an excellent substrate material for high power electronic devices and high-frequency electronic devices. Being cost-effective and defect-free are the two biggest challenges at present. For the physical vapor transport (PVT) growth of a SiC single crystal, SiC powder is used as the sou...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-12-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/11/12/1581 |