Simulation of proton-induced primary displacement damage in GaAs under different ambient temperatures
The performance of on-orbit GaAs-based solar cells is susceptible to the displacement damage effect. The proton-induced primary displacement damage in GaAs on a geosynchronous equatorial orbit (GEO) was simulated and analyzed by combining the Monte Carlo (MC) and molecular dynamics (MD) methods. The...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0175973 |