Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy
We report the continuous Si doping in β-Ga2O3 epitaxial films grown by plasma-assisted molecular beam epitaxy through the use of a valved effusion cell for the Si source. Secondary ion mass spectroscopy results exhibit that the Si doping profiles in β-Ga2O3 are flat and have sharp turn-on/off depth...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-04-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0130654 |