Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO<sub>2</sub> Multilayer Structure for Neuromorphic Systems

Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO<sub>2</sub> Multilayer Structure for Neuromorphic Systems

In this work, we report the digital and analog resistive-switching (RS) characteristics in a memristor based on silicon nanocrystals (Si-NCs) integrated into a complementary metal-oxide-semiconductor (MOS) structure. Si-NCs with a diameter of 5.48 ± 1.24 nm embedded in a SiO<sub>2</sub>/...

Full description

Bibliographic Details
Main Authors: Alfredo Morales-Sánchez, Karla Esther González-Flores, Sergio Alfonso Pérez-García, Sergio González-Torres, Blas Garrido-Fernández, Luis Hernández-Martínez, Mario Moreno-Moreno
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Nanomaterials
Subjects:
silicon nanocrystals
multilayers
resistive switching
memristors
neuromorphic computing
Online Access:https://www.mdpi.com/2079-4991/13/6/986

Internet

https://www.mdpi.com/2079-4991/13/6/986

Similar Items