Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers
In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly f...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4916268 |