A 21.4 pW Subthreshold Voltage Reference with 0.020 %/V Line Sensitivity Using DIBL Compensation

A 21.4 pW Subthreshold Voltage Reference with 0.020 %/V Line Sensitivity Using DIBL Compensation

This paper presents an ultra-low-power voltage reference designed in 180 nm CMOS technology. To achieve near-zero line sensitivity, a two-transistor (2-T) voltage reference is biased with a current source to cancel the drain-induced barrier-lowering (DIBL) effect of the 2-T core, thus improving the...

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Bibliographic Details
Main Authors: Louis Colbach, Taekwang Jang, Youngwoo Ji
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Sensors
Subjects:
ultra-low-power
subthreshold voltage reference
line sensitivity
DIBL effect
temperature coefficient
Online Access:https://www.mdpi.com/1424-8220/23/4/1862

Internet

https://www.mdpi.com/1424-8220/23/4/1862

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